標題: Source-drain barrier height engineering for suppressing the a-Si : H TFTs photo leakage current
作者: Wang, M. C.
Chang, T. C.
Liu, P. T.
Li, Y. Y.
Huang, F. S.
Mei, Y. J.
Chen, J. R.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: a-Si : H;TFT;photo leakage current
公開日期: 3-十二月-2007
摘要: For effectively reducing the off-state signal loss resulted from the a-Si:H TFTs photo leakage current, the a-Si:H TFTs with the use of ITO as source-drain metal have been fabricated for this study. Several TFT structures have been fabricated to examine this characteristic. A remarkable reduction in photo leakage current has been observed under the 3300 cd/m(2) CCFL backlight illumination. The source-drain barrier height engineering has been proposed for these results. According to the energy band diagram, the barrier height for hole is estimated about 3 eV. As a result, the photo-generation holes blocked in the source-drain barrier height could effectively reduce the photo leakage current in off-state. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2007.06.161
http://hdl.handle.net/11536/3797
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.06.161
期刊: THIN SOLID FILMS
Volume: 516
Issue: 2-4
起始頁: 470
結束頁: 474
顯示於類別:會議論文


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  1. 000252037500069.pdf