標題: MEASUREMENT OF ULTRATHIN (LESS-THAN-100-A) OXIDE-FILMS BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY
作者: CHAO, TS
LEE, CL
LEI, TF
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
公開日期: 1-六月-1991
摘要: The application of the multiple-angle incident ellipsometry to measure the ultrathin (< 100 angstrom) oxide has been studied in this paper. First, four interfacial models are investigated by using a fitting scheme to fit ellipsometric data (DELTA, psi) at various incident angles, and the abrupt model is found to be the most appropriate model to model the transition region of the SiO2-Si interface. The sensitivities on the incident angle and the errors induced by the ellipsometric parameter variations are also analyzed. Ellipsometry is applied to measure the native oxides of Si wafers after they are treated with different cleaning processes, and it is also applied to measure refractive indexes and thicknesses of ultrathin thermally grown SiO2. It is believed that these are the most accurately measured results on the refractive indexes of ultrathin oxides. Also, an empirical formula for thermal oxide growth in dry O2 is obtained.
URI: http://hdl.handle.net/11536/3780
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 138
Issue: 6
起始頁: 1756
結束頁: 1761
顯示於類別:期刊論文


文件中的檔案:

  1. A1991FQ10400044.pdf