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dc.contributor.authorCHIU, HTen_US
dc.contributor.authorWU, PFen_US
dc.date.accessioned2014-12-08T15:05:14Z-
dc.date.available2014-12-08T15:05:14Z-
dc.date.issued1991-06-01en_US
dc.identifier.issn0009-4536en_US
dc.identifier.urihttp://hdl.handle.net/11536/3777-
dc.description.abstract(Me3Si)2SiMe2, (Me3Si)3SiMe and (Me3Si)4Si were used as precursors for the deposition of polycrystalline beta-SiC thin films on silicon substrates at 1000-1200-degrees-C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.en_US
dc.language.isoen_USen_US
dc.subjectLOW-PRESSURE CHEMICAL VAPOR DEPOSITIONen_US
dc.subjectORGANOPOLYSILANESen_US
dc.subjectSILICON CARBIDE THIN FILMSen_US
dc.titleLOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM ORGANOPOLYSILANESen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE CHINESE CHEMICAL SOCIETYen_US
dc.citation.volume38en_US
dc.citation.issue3en_US
dc.citation.spage231en_US
dc.citation.epage234en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1991FR18000004-
dc.citation.woscount5-
Appears in Collections:Articles