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dc.contributor.authorLIN, PSen_US
dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:05:13Z-
dc.date.available2014-12-08T15:05:13Z-
dc.date.issued1991-06-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.81629en_US
dc.identifier.urihttp://hdl.handle.net/11536/3764-
dc.description.abstractA new simplified two-dimensional model for the threshold voltage of MOSFET's is derived in terms of simple characteristic functions. These characteristic functions are transformed from the exact series solution of the two-dimensional Poisson's equation, in which the effects of a nonuniformly doped substrate and a finite graded source-drain junction depth have been included. The attractive features of the developed model are: 1) charge-screening effects are proposed to account for the weak dependence of the threshold voltage on the substrate bias for short-channel MOSFET's, and 2) exact source and drain boundary potentials can be approximated by their equivalent power functions. The accuracy of the simplified 2-D model has been verified by 2-D numerical analysis. Moreover, comparisons between the simplified 2-D model and the experimental results have been made, and good agreement has been obtained for wide ranges of channel lengths, applied substrate, and drain biases.en_US
dc.language.isoen_USen_US
dc.titleA NEW SIMPLIFIED 2-DIMENSIONAL MODEL FOR THE THRESHOLD VOLTAGE OF MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATEen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.81629en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume38en_US
dc.citation.issue6en_US
dc.citation.spage1376en_US
dc.citation.epage1383en_US
dc.contributor.department工學院zh_TW
dc.contributor.departmentCollege of Engineeringen_US
dc.identifier.wosnumberWOS:A1991FL26900020-
dc.citation.woscount8-
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