標題: A NEW SIMPLIFIED 2-DIMENSIONAL MODEL FOR THE THRESHOLD VOLTAGE OF MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE
作者: LIN, PS
WU, CY
工學院
College of Engineering
公開日期: 1-六月-1991
摘要: A new simplified two-dimensional model for the threshold voltage of MOSFET's is derived in terms of simple characteristic functions. These characteristic functions are transformed from the exact series solution of the two-dimensional Poisson's equation, in which the effects of a nonuniformly doped substrate and a finite graded source-drain junction depth have been included. The attractive features of the developed model are: 1) charge-screening effects are proposed to account for the weak dependence of the threshold voltage on the substrate bias for short-channel MOSFET's, and 2) exact source and drain boundary potentials can be approximated by their equivalent power functions. The accuracy of the simplified 2-D model has been verified by 2-D numerical analysis. Moreover, comparisons between the simplified 2-D model and the experimental results have been made, and good agreement has been obtained for wide ranges of channel lengths, applied substrate, and drain biases.
URI: http://dx.doi.org/10.1109/16.81629
http://hdl.handle.net/11536/3764
ISSN: 0018-9383
DOI: 10.1109/16.81629
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 38
Issue: 6
起始頁: 1376
結束頁: 1383
顯示於類別:期刊論文


文件中的檔案:

  1. A1991FL26900020.pdf