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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorYEN, MSen_US
dc.date.accessioned2014-12-08T15:05:13Z-
dc.date.available2014-12-08T15:05:13Z-
dc.date.issued1991-06-06en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/11536/3757-
dc.description.abstractHydrogen plasma pretreatment (90-115-degrees-C, 10-30 min) of P+-implanted (100 keV, 1 x 10(15) ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40-degrees-C. At lower temperature for hydrogen plasma pretreatment (down to 40-degrees-C) and higher temperature for oxygen plasma stripping (up to 115-degrees-C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller.en_US
dc.language.isoen_USen_US
dc.subjectION IMPLANTATIONen_US
dc.subjectPLASMASen_US
dc.titleENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTSen_US
dc.typeArticleen_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume27en_US
dc.citation.issue12en_US
dc.citation.spage1079en_US
dc.citation.epage1081en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1991FR44000043-
dc.citation.woscount0-
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