標題: ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS
作者: LOONG, WA
YEN, MS
交大名義發表
應用化學系
National Chiao Tung University
Department of Applied Chemistry
關鍵字: ION IMPLANTATION;PLASMAS
公開日期: 6-六月-1991
摘要: Hydrogen plasma pretreatment (90-115-degrees-C, 10-30 min) of P+-implanted (100 keV, 1 x 10(15) ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40-degrees-C. At lower temperature for hydrogen plasma pretreatment (down to 40-degrees-C) and higher temperature for oxygen plasma stripping (up to 115-degrees-C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller.
URI: http://hdl.handle.net/11536/3757
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 27
Issue: 12
起始頁: 1079
結束頁: 1081
顯示於類別:期刊論文


文件中的檔案:

  1. A1991FR44000043.pdf