標題: NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M)
作者: PAN, CL
WU, HH
HSIEH, TR
交大名義發表
光電工程學系
National Chiao Tung University
Department of Photonics
公開日期: 1-Jul-1991
摘要: We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in undoped semi-insulating (SI) GaAs wafers. The light source was a power-stabilized laser diode (lambda = 1.3-mu-m) operating in the light emitting diode (LED) mode. The sensitivity of the apparatus was as low as 10(14) cm-3 for typical commerical wafers 350-mu-m in thickness.
URI: http://hdl.handle.net/11536/3749
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 30
Issue: 7
起始頁: 1430
結束頁: 1431
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