標題: Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application
作者: Yang, F. M.
Chang, T. C.
Liu, Po-Tsun
Yeh, Y. H.
Yu, Y. C.
Lin, J. Y.
Sze, S. M.
Lou, J. C.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: nonvolatile memory;nanocrystals;HfO2
公開日期: 3-Dec-2007
摘要: In this study, a nonvolatile memory device with NiSi2 nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated. A significant memory effect is observed during the characterization of the electrical properties. When a low operating voltage, 4 V, is applied, a significant threshold voltage shift of 1.3 V, is observed. The processing of this structure is compatible with the current manufacturing technology of semiconductor industry. (C) 2007 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.tsf.2007.06.131
http://hdl.handle.net/11536/3741
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.06.131
期刊: THIN SOLID FILMS
Volume: 516
Issue: 2-4
起始頁: 360
結束頁: 363
Appears in Collections:Conferences Paper


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