標題: 2-V-operation delta-doped power HEMT's for personal handy-phone systems
作者: Lai, YL
Chang, EY
Chang, CY
Liu, TH
Wang, SP
Hsu, HT
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-1997
摘要: A high-efficiency and high-power-density delta-doped AIGaAs/InGaAs HEMT with low adjacent channel leakage has been developed for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.0-V-operation HEMT with a 1-mm gate width demonstrated a power-added efficiency of 45.3% and an output power density of 105 mW/mm. This is the highest power density ever reported by the power transistors for the PHS. The state-of-the-art results for the PHS operating at 2.0 V were achieved by the delta-doped power HEMT for the first time.
URI: http://dx.doi.org/10.1109/75.605483
http://hdl.handle.net/11536/372
ISSN: 1051-8207
DOI: 10.1109/75.605483
期刊: IEEE MICROWAVE AND GUIDED WAVE LETTERS
Volume: 7
Issue: 8
起始頁: 219
結束頁: 221
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XM45200005.pdf