標題: NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETS
作者: LO, SH
LEE, CP
物理研究所
電控工程研究所
Institute of Physics
Institute of Electrical and Control Engineering
公開日期: 1-八月-1991
摘要: The small-signal output conductance of GaAs MESFET's on semi-insulating substrate has been studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviors of the output conductance are analyzed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentration and acceptor concentration have been analyzed and compared. For devices with higher trap concentration and higher acceptor concentration, the output conductance is lower but exhibits stronger frequency dependence.
URI: http://dx.doi.org/10.1109/16.119003
http://hdl.handle.net/11536/3714
ISSN: 0018-9383
DOI: 10.1109/16.119003
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 38
Issue: 8
起始頁: 1693
結束頁: 1700
顯示於類別:期刊論文


文件中的檔案:

  1. A1991FW96400002.pdf