標題: NEW OBSERVATION OF GATE CURRENT IN OFF-STATE MOSFET
作者: CHEN, MJ
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1991
摘要: For a gate-controlled p+-n diode having gate-p+ overlap area of 3.7 x 10(-4) cm2, the work reports a new observation of the leakage current through a 235-angstrom gate oxide: the gate current components both due to Fowler-Nordheim electron tunneling through the gate-p+ overlap oxide and due to hot-electron injection have been separately detected. The corresponding gate current has been found to be dominated by Fowler-Nordheim electron tunneling prior to significant surface avalanche impact ionization. This observation is important for device application and for reliability study.
URI: http://dx.doi.org/10.1109/16.83738
http://hdl.handle.net/11536/3701
ISSN: 0018-9383
DOI: 10.1109/16.83738
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 38
Issue: 9
起始頁: 2118
結束頁: 2120
顯示於類別:期刊論文


文件中的檔案:

  1. A1991FZ27400022.pdf