標題: Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application
作者: Chen, Wei-Ren
Chang, Ting-Chang
Liu, Po-Tsun
Tu, Chun-Hao
Yeh, Jui-Lung
Hsieh, Yen-Ting
Wang, Ren-You
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: germanium nanocrystal;germanium oxide;rapid temperature oxidation;nonvolatile memory
公開日期: 15-Dec-2007
摘要: A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly observed by transmission electron microscope analysis. Moreover, an over-oxidation phenomenon for the formation of GeO2 in this work was found at higher temperature oxidation according to the X-ray photoelectron spectroscopy analysis. The obvious memory window was found in the capacitance-voltage hysteresis curve, and the program efficiency of holes was superior to electrons due to the electronic affinity of GeO2 smaller than silicon substrate for a structure of Ge nanocrystals surrounded with GeO2 layer. Furthermore, the Ge nanocrystals surrounded with GeO2 layer structure has good retention time and endurance. (c) 2007 Elsevier B.V All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2007.07.112
http://hdl.handle.net/11536/3697
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2007.07.112
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 202
Issue: 4-7
起始頁: 1333
結束頁: 1337
Appears in Collections:Conferences Paper


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