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dc.contributor.authorCHIOU, BSen_US
dc.contributor.authorLIU, KCen_US
dc.contributor.authorDUH, JGen_US
dc.contributor.authorCHUNG, MCen_US
dc.date.accessioned2014-12-08T15:05:10Z-
dc.date.available2014-12-08T15:05:10Z-
dc.date.issued1991-09-01en_US
dc.identifier.issn0148-6411en_US
dc.identifier.urihttp://dx.doi.org/10.1109/33.83957en_US
dc.identifier.urihttp://hdl.handle.net/11536/3695-
dc.description.abstractGlass phase plays an important role in the characteristics of thick-film microelectronics. A dielectric system in BaTiO3 and SrTiO3 containing PbO, B2O3, SiO2, and Al2O3 glass constituents is investigated. Microstructure evolution and phase distribution after thermal aging are studied with the aid of electron microscope and X-ray diffractometer. It is observed that the phases in 40 vol% BaTiO3-25 vol% SrTiO3-35 vol% glass thick-film dielectric are not altered after 500-degrees-C aging for 480 h. The variation in surface morphology after long time aging is attributed to the precipitation of heavy metal component from the glass which acts as a diffusion species and then dissolves the crystalline phase during firing. The presence of glass in the dielectric enhances the formation of solid solution (Ba(x)Sr1-x)TiO3 and results in the broadening of the Curie peak.en_US
dc.language.isoen_USen_US
dc.titleDEVELOPMENT OF TEMPERATURE-STABLE THICK-FILM DIELECTRICS .3. ROLE OF GLASS ON THE MICROSTRUCTURE EVOLUTION OF A THICK-FILM DIELECTRICen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/33.83957en_US
dc.identifier.journalIEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGYen_US
dc.citation.volume14en_US
dc.citation.issue3en_US
dc.citation.spage645en_US
dc.citation.epage649en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1991GC91000033-
dc.citation.woscount6-
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