標題: Fort-nation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application
作者: Chen, Wei-Ren
Chang, Ting-Chang
Liu, Po-Tsun
Tu, Chun-Hao
Chi, Feng-Weng
Tsao, Shu-Wei
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: metal nanocrystal;nonvolatile memory;nickel-silicide
公開日期: 15-Dec-2007
摘要: The formation of stacked nickel-silicide nanocrystals by using a co-mixed target is proposed in this paper. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide after rapid thermal oxidation. The obvious memory window can be used to define "1" and "0" states at low voltage operation. In addition, the program/erase characteristics have different charge/discharge efficiency due to the effect of stacked structure. Furthermore, good endurance and retention characteristics are exhibited for nonvolatile memory application. Besides, this technology is suitable for the fabrication of current nonvolatile memory and application of low power device. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2007.07.101
http://hdl.handle.net/11536/3663
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2007.07.101
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 202
Issue: 4-7
起始頁: 1292
結束頁: 1296
Appears in Collections:Conferences Paper


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