標題: EXCITON BINDING-ENERGY IN A GAAS/ALXGA1-XAS QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD
作者: CHUU, DS
SHIH, YT
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
公開日期: 15-十月-1991
摘要: The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained.
URI: http://dx.doi.org/10.1103/PhysRevB.44.8054
http://hdl.handle.net/11536/3657
ISSN: 0163-1829
DOI: 10.1103/PhysRevB.44.8054
期刊: PHYSICAL REVIEW B
Volume: 44
Issue: 15
起始頁: 8054
結束頁: 8060
顯示於類別:期刊論文