標題: Characterization of yttria-stabilized zirconia thin films grown by planar magnetron sputtering
作者: Tsai, WC
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: yttria-stabilized zirconia;magnetron sputtering;plasma bombardment;thin films
公開日期: 28-八月-1997
摘要: Yttria-stabilized zirconia (YSZ) thin films were grown on Si by rf magnetron sputtering. Sputtering gun was positioned at various angles to the substrate normal to change the amount of plasma bombardment on the as-deposited films. YSZ films grown by off-axis sputtering (90 degrees) are readily (200)-preferred orientated but the preferred orientation of the film is deteriorated when the growth angle is decreased and, consequently, plasma bombardment is increased due to the decreasing growth angles. The off-axis grown YSZ films exhibit atomically smooth interfaces, which are not observed for those films grown by on-axis sputtering. The variation of oxide charge with the growth angle is studied with the Al/YSZ/Si structure. The plasma bombardment plays an important role on the crystallinity and, therefore, the defect type of the films and is also considered to be responsible for the Si outdiffusion occurring in an on-axis grown film. (C) 1997 Elsevier Science S.A.
URI: http://hdl.handle.net/11536/363
ISSN: 0040-6090
期刊: THIN SOLID FILMS
Volume: 306
Issue: 1
起始頁: 86
結束頁: 91
顯示於類別:期刊論文


文件中的檔案:

  1. A1997YB66700012.pdf