標題: TITANIUM MONONITRIDE AS AN ANTIREFLECTION LAYER ON ALUMINUM METALLIZATION FOR SUBMICRON PHOTOLITHOGRAPHIC PATTERNING
作者: LOONG, WA
CHIU, KD
交大名義發表
應用化學系
National Chiao Tung University
Department of Applied Chemistry
公開日期: 1-十二月-1991
摘要: Titanium mononitride (TiN) as an antireflection layer over aluminium metallization on a Si wafer (Al/Si) in submicron photolithography has been studied. Both notching and standing wave effects of non-dyed and dyed positive resists coated on TiN/Al/Si are eliminated with 0.8-mu-m designed linewidth test patterns using a g-line stepper under defocus of 0, +1 and -1-mu-m. TiN/Al/Si has a sheet resistivity of about 45 m-OMEGA/square, similar to Al/Si up to tested TiN thickness of 0.12-mu-m. Thus, TiN in the TiN/Al/Si system functions not only as a conventional diffusion barrier, but also as an antireflection layer and as a metallization layer. Selective reactive ion etching between Al and TiN can be achieved in an etchant gas mixture of 3:7 CHF3:CF4 with a DC bias of -100 V.
URI: http://dx.doi.org/10.1088/0268-1242/6/12/013
http://hdl.handle.net/11536/3620
ISSN: 0268-1242
DOI: 10.1088/0268-1242/6/12/013
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 6
Issue: 12
起始頁: 1170
結束頁: 1174
顯示於類別:期刊論文


文件中的檔案:

  1. A1991GX13700013.pdf