標題: The oxidation mechanism of low-pressure dry oxidation of nitrides for memory devices
作者: Liu, HW
Su, HP
Lai, WK
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1997
摘要: To be utilized in the high density dynamic random access memory devices, low-pressure dry oxidation of the very thin nitrides has been performed to successfully obtain the ultrathin capacitors' dielectrics with the effective oxide thickness (t(ox,eff)) of 30 - 60 Angstrom. For the electrical properties, the low-pressure dry oxidized (LPDO) nitrides express thinner effective oxide thickness, lower leakage current, and higher reliability than do the atmospheric pressure dry oxidized (APDO) nitrides. After analyzing the diluted HF etching profiles, Auger electron spectrum and Fourier transform infrared spectrum data, an oxide/nitride/oxide (O/N/O) structure is realized for the LPDO samples with respect to the nitride/oxide structure for the APDO ones. This ultrathin O/N/O structure is believed to be the main cause of improving the electrical characteristics. Finally, a low-pressure enhanced oxidation model is also proposed to explain the unusual oxidation phenomenon on the top of the nitride films. The mechanisms of APDO and atmospheric pressure wet oxidation of nitride films are also compared.
URI: http://hdl.handle.net/11536/358
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 144
Issue: 9
起始頁: 3288
結束頁: 3293
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XY20000073.pdf