標題: HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS
作者: WU, SL
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-1992
摘要: A high-performance polysilicon contacted shallow junction diode formed by using a stacked-amorphous-silicon (SAS) film as the diffusion source is reported. The diode-exhibited a very low leakage current (less-than-or-equal-to 1 nA/cm2 at -5 V), a very high breakdown voltage (greater-than-or-equal-to 100 V), and a forward ideality factor m less-than-or-equal-to 1.05 over 7 decades.
URI: http://dx.doi.org/10.1109/55.144939
http://hdl.handle.net/11536/3577
ISSN: 0741-3106
DOI: 10.1109/55.144939
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 13
Issue: 1
起始頁: 23
結束頁: 25
顯示於類別:期刊論文


文件中的檔案:

  1. A1992GV84800008.pdf