標題: INVESTIGATION OF THERMAL COEFFICIENT FOR POLYCRYSTALLINE SILICON THERMAL SENSOR DIODE
作者: YEH, CF
LIN, SS
YANG, GP
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
關鍵字: POLYCRYSTALLINE SI;P-N JUNCTION;THERMAL SENSOR;THERMAL COEFFICIENT;DOPING;THERMAL SENSITIVITY;CASCADE SERIES NUMBER;PERIPHERY
公開日期: 1-二月-1992
摘要: Thermal sensors utilizing p-n junction diodes built into the polycrystalline silicon layer are developed. The effective factors influencing the thermal coefficient of polycrystalline silicon thermal sensor diodes are clarified. It is found that diodes with a light boron dose have a larger thermal coefficient than those with a heavy boron dose. The plural p-n diodes connected with more cascade series number have a larger thermal coefficient than ones with less cascade series number. The periphery of the thermal sensor seems to have little effect on the thermal coefficient. In addition, the thermal coefficient will become higher as a larger forward current is selected. The thermal coefficient of the sensor with a boron dose of 1 x 10(15) cm-2 will reach a saturation value of -2 mV/K when the forward current is above 2-mu-A.
URI: http://dx.doi.org/10.1143/JJAP.31.151
http://hdl.handle.net/11536/3543
ISSN: 0021-4922
DOI: 10.1143/JJAP.31.151
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 31
Issue: 2A
起始頁: 151
結束頁: 155
顯示於類別:期刊論文


文件中的檔案:

  1. A1992HK02800001.pdf