標題: INFLUENCE OF NONPARABOLICITY ON HOT-ELECTRONS IN N-TYPE GALLIUM-ARSENIDE
作者: WU, CC
LIN, CJ
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-三月-1992
摘要: Hot-electron transport in n-type GaAs has been investigated in the crossed applied DC electric field and DC magnetic field. The energy band structure of conduction electrons is taken to be a non-parabolic band and the dominant interaction between hot electrons and lattices is assumed to be the deformation-potential coupling. Results show that the dissipative current density increases nonlinearly with the applied electric field owing to the non-parabolic band structure of electrons in semiconductors. In the lower electric field region, the dependence of the current density on temperature does not appear to follow a regular trend. It is also shown that the current density depends strongly on the magnetic field.
URI: http://dx.doi.org/10.1088/0268-1242/7/3B/095
http://hdl.handle.net/11536/3512
ISSN: 0268-1242
DOI: 10.1088/0268-1242/7/3B/095
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 7
Issue: 3B
起始頁: B367
結束頁: B368
顯示於類別:會議論文


文件中的檔案:

  1. A1992HL26200097.pdf