標題: A NEW ON-CHIP ESD PROTECTION CIRCUIT WITH DUAL PARASITIC SCR STRUCTURES FOR CMOS VLSI
作者: WU, CY
KER, MD
LEE, CY
KO, J
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-三月-1992
摘要: A new CMOS on-chip electrostatic discharge (ESD) protection circuit which consists of dual parasitic SCR structures is proposed and investigated. Experimental results show that with a small layout area of 8800-mu-m2, the protection circuit can successfully perform negative and positive ESD protection with failure thresholds greater than +/- 1 and +/- 10 kV in machine-mode (MM) and human-body-mode (HBM) testing, respectively. The low ESD trigger voltages in both SCR's can be readily achieved through proper circuit design and without involving device or junction breakdown. The input capacitance of the proposed protection circuit is very low and no diffusion resistor between I/O pad and internal circuits is required, so it is suitable for high-speed applications. Moreover, this ESD protection circuit is fully process compatible with CMOS technologies.
URI: http://dx.doi.org/10.1109/4.121548
http://hdl.handle.net/11536/3502
ISSN: 0018-9200
DOI: 10.1109/4.121548
期刊: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume: 27
Issue: 3
起始頁: 274
結束頁: 280
顯示於類別:期刊論文


文件中的檔案:

  1. A1992HE80000006.pdf