標題: Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion source
作者: Chao, TS
Kuo, CP
Lei, TF
Chen, TP
Huang, TY
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 8-一月-1998
摘要: The authors report a novel Si-B diffusion source for doping p(+)-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. AU of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.
URI: http://hdl.handle.net/11536/35
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 34
Issue: 1
起始頁: 128
結束頁: 129
顯示於類別:期刊論文


文件中的檔案:

  1. 000071892700088.pdf