Title: Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion source
Authors: Chao, TS
Kuo, CP
Lei, TF
Chen, TP
Huang, TY
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 8-Jan-1998
Abstract: The authors report a novel Si-B diffusion source for doping p(+)-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. AU of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.
URI: http://hdl.handle.net/11536/35
ISSN: 0013-5194
Journal: ELECTRONICS LETTERS
Volume: 34
Issue: 1
Begin Page: 128
End Page: 129
Appears in Collections:Articles


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