標題: AN ANALYTICAL THRESHOLD-VOLTAGE MODEL OF TRENCH-ISOLATED MOS DEVICES WITH NONUNIFORMLY DOPED SUBSTRATES
作者: CHUNG, SSS
LI, TC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1992
摘要: A simple closed-form expression of the threshold voltage is developed for Trench-Isolated MOS (TIMOS) devices with feature size down to the deep-submicrometer range. The analytical expression is the first developed to include the non-uniform doping effect of a narrow-gate-width device. The inverse narrow width effect can be predicted analytically from the proposed model. It was derived by modeling the gate sidewall capacitance to include the two-dimensional field-induced edge fringing effect and solving the Poisson equation to include the channel implant effect at different operating backgate biases. A two-dimensional simulation program was also developed, and the simulated data were used for verification of the analytical model. Good agreements between the modeled and simulated data have been achieved for a wide range of gate widths and biases. The model is well suited for the design of the basic transistor cell in DRAM circuits using trench field oxide isolation structure.
URI: http://dx.doi.org/10.1109/16.123486
http://hdl.handle.net/11536/3498
ISSN: 0018-9383
DOI: 10.1109/16.123486
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 39
Issue: 3
起始頁: 614
結束頁: 622
顯示於類別:期刊論文


文件中的檔案:

  1. A1992HE79900023.pdf