標題: A study on the radiation hardness of flash cell with horn-shaped floating-gate
作者: Huang, TY
Jong, FC
Chao, TS
Lin, HC
Leu, LY
Young, K
Lin, CH
Chiu, KY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: flash cell;EEPROM;non-volatile memory;horn-shaped floating gate;radiation effects;rad-hard
公開日期: 1-九月-1997
摘要: The effects of radiation on the characteristics of split-gate electrical erasable programmable read only memory (EEPROM)/flash cells with recently-proposed horn-shaped floating gates are studied in terms of cell read current; data retention, cycling endurance, program/erase efficiency, threshold voltage and junction leakage. Our results show that the cells appear to survive after 1 Mrad (Si) Co-60 irradiation. Moreover, the after-irradiation cell read current actually increases in the ''erase'' (i.e., low-threshold voltage, high-conducting) state (i.e., improves), albeit the cell read current also increases in the ''program'' (i.e., high-threshold voltage, low-conducting) state (i.e., a degradation). Our results also show that, despite an improvement in the initial read current in the ''erase'' state immediately after radiation, the write/erase cycling endurance of the flash cells is significantly impeded after irradiation, due to a much faster ''window closure'' rate in the ''erase'' state, although the cell read current is found to remain relatively stable in the ''program'' state after cycling.
URI: http://dx.doi.org/10.1143/JJAP.36.5459
http://hdl.handle.net/11536/349
ISSN: 0021-4922
DOI: 10.1143/JJAP.36.5459
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 9A
起始頁: 5459
結束頁: 5463
顯示於類別:期刊論文


文件中的檔案:

  1. A1997YE80400011.pdf