標題: INFLUENCE OF IMPLANT CONDITION ON THE TRANSIENT-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICON
作者: JUANG, MH
WAN, FS
LIU, HW
CHENG, KL
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Mar-1992
摘要: Under high-dosage boron implant, the implant condition was found to be important for reducing the transient-enhanced diffusion of boron in Si and forming shallow p + n junction with good rectifying characteristics as well as high dopant concentration in the diffused region. The BF2+-implantation resulted in not only an excellent dopant activation but also a reduced anomalous diffusion due to the formation of amorphous layer and the scarce defects underneath the amorphous/crystalline (a/c) interface. The B+-implanted crystalline samples manifested a poor activation efficiency, and a largely anomalous diffusion at the high temperature with prolonged-time annealing ascribed to much damage induced by the high-dose implant. The B+-implanted pre-Si+-amorphized samples also displayed severely transient-enhanced diffusion in spite of the good dopant activation.
URI: http://dx.doi.org/10.1063/1.351082
http://hdl.handle.net/11536/3484
ISSN: 0021-8979
DOI: 10.1063/1.351082
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 71
Issue: 6
起始頁: 2611
結束頁: 2614
Appears in Collections:Articles