標題: THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P+-N JUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATE
作者: JUANG, MH
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-1992
摘要: Silicided shallow p+-n junctions, formed by BF2+ implantation into thin Co films on Si substrates and subsequently annealed, show a reverse anneal of junction characteristics in the temperature range between 550 and 600-degrees-C. The reverse anneal means a behavior showing the degradation of considered parameters with increasing anneal temperature. A higher implant dosage causes a more distinct reverse anneal. The reverse anneal of electrical characteristics was associated with the reverse anneal of substitutional boron. A shallow p+-n junction with a leakage current density lower than 3 nA/cm2, a forward ideality factor better than 1.01, and a junction depth of about 0.1-mu-m was therefore achieved by just a 550-degrees-C anneal.
URI: http://dx.doi.org/10.1109/55.145027
http://hdl.handle.net/11536/3472
ISSN: 0741-3106
DOI: 10.1109/55.145027
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 13
Issue: 4
起始頁: 220
結束頁: 222
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