標題: Monitoring trapped charge generation for gate oxide under stress
作者: Lin, YH
Lee, CL
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1997
摘要: A measurement method to extract the respective quantities and centroids of positive and negative trapped charges, i.e., Q(p) and Q(n), generated by the negative current stress for gate oxides is proposed and demonstrated, The method is based on neutralization of Q(p) by a low positive current stress to differentiate the effects of Q(p) and Q(n). From the extracted quantities and centroids of Q(p) and Q(n) of negatively stressed oxides, it was found that Q(p) and Q(n) are generated near the oxide/substrate interface and Q(p) is initially much larger than Q(n). After the continuous stressing, Q(p) saturates and moves closer to the interface, but Q(n) keeps increasing and moves away from the interface, especially for those oxides after the post-poly anneal (PPA) treatment, Q(n) is very unstable and easily neutralized, either by a small stress of opposite polarity or the same polarity, For the latter, Q(n) is mainly dependent on the level of the final stressing field.
URI: http://dx.doi.org/10.1109/16.622599
http://hdl.handle.net/11536/346
ISSN: 0018-9383
DOI: 10.1109/16.622599
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 44
Issue: 9
起始頁: 1441
結束頁: 1446
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XR10800013.pdf