標題: INTERACTION OF COBALT AND FIELD OXIDE DURING LOW-TEMPERATURE FURNACE ANNEALING
作者: CHEN, BS
CHEN, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ANNEALING;SEMICONDUCTOR DEVICES AND MATERIALS
公開日期: 9-四月-1992
摘要: The interaction of cobalt and thermally grown field oxide (5000 angstrom) during low temperature furnace annealing (600-800-degrees-C) is described. It is found that the isolation function of oxide becomes unreliable and s-pit clusters from in the silicon substrate when the annealing temperature exceeds 700-degrees-C. Therefore, it is essential to limit the first annealing temperature of the selfaligned silicide scheme below 600-degrees-C.
URI: http://hdl.handle.net/11536/3454
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 28
Issue: 8
起始頁: 756
結束頁: 757
顯示於類別:期刊論文


文件中的檔案:

  1. A1992HP54300036.pdf