標題: High-efficiency and low-distortion directly-ion-implanted GaAs power MESFET's for digital personal handy-phone applications
作者: Lai, YL
Chang, EY
Chang, CY
Tai, MC
Liu, TH
Wang, SP
Chuang, KC
Lee, CT
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1997
摘要: We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated PBS standard signals, the 2.2-V-operation device with a gate width (W-g) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (P-adj) of -58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications, The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.
URI: http://dx.doi.org/10.1109/55.622519
http://hdl.handle.net/11536/342
ISSN: 0741-3106
DOI: 10.1109/55.622519
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 18
Issue: 9
起始頁: 429
結束頁: 431
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XR89300009.pdf