標題: High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications
作者: Yang, Shao-Ming
Huang, Jiun-Jia
Chien, Chao-Hsin
Taeng, Pei-Jer
Lee, Lurng-Shehng
Tsai, Ming-Jinn
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.
URI: http://hdl.handle.net/11536/3419
http://dx.doi.org/10.1109/VTSA.2008.4530792
ISBN: 978-1-4244-1614-1
DOI: 10.1109/VTSA.2008.4530792
期刊: 2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM
起始頁: 48
結束頁: 49
顯示於類別:會議論文


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