標題: QUANTUM SIZE EFFECTS IN CDS THIN-FILMS
作者: CHUU, DS
DAI, CM
電子物理學系
Department of Electrophysics
公開日期: 15-五月-1992
摘要: Resonant Raman spectroscopy is used to study quantum size effects in CdS films. The lattice softening of the CdS LO-phonon mode in a CdS film with a thickness less than 800 angstrom is observed. As the thickness is less than 410 angstrom, the TO-phonon mode is observed at 4880 angstrom excitation wavelength, which is above the band gap of bulk CdS (2.42 eV) at room temperature. These phenomena are attributed to the size quantization effects of the grain size and the low-dimensional thin-film structure. The quantum size effects cause a blueshift of the band gap in the as-deposited CdS thin film. The peak of the TO-phonon-mode Raman line of the CdS film is observed around 220 cm-1, which has a shift of 8 cm-1 from the Raman line of the most active TO-phonon mode of bulk CdS. The magnitude of softening energy of the TO-phonon mode is observed to be independent of the film thickness.
URI: http://dx.doi.org/10.1103/PhysRevB.45.11805
http://hdl.handle.net/11536/3418
ISSN: 0163-1829
DOI: 10.1103/PhysRevB.45.11805
期刊: PHYSICAL REVIEW B
Volume: 45
Issue: 20
起始頁: 11805
結束頁: 11810
顯示於類別:期刊論文