標題: Thin oxides with in situ native oxide removal
作者: Chin, A
Chen, WJ
Chang, T
Kao, RH
Lin, BC
Tsai, C
Huang, JCM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1997
摘要: We have studied the inversion layer mobility of n-MOSFET's with thin-gate oxide of 20 to 70 Angstrom. Direct relationship of electron mobility to oxide/channel interface roughness was obtained from measured mobility of MOSFET's and high-resolution TEM. By using a low-pressure oxidation process with native oxide removed in situ prior to oxidation, atomically smooth interface of oxide/channel was observed by high-resolution TEM for oxide thicknesses of 11 and 38 Angstrom. The roughness increased to one to two monolayers of Si in a 55-Angstrom oxide. Significant mobility improvement was obtained from these oxides with smoother interface than that from conventional furnace oxidation. Mobility reduction with decreasing oxide thickness was observed in the 20- and 35-Angstrom oxide, with the same atomically smooth oxide/channel interface. This may be due to the remote Coulomb scattering from gate electrode or the gate field variation from poly-gate/oxide interface roughness.
URI: http://dx.doi.org/10.1109/55.622515
http://hdl.handle.net/11536/340
ISSN: 0741-3106
DOI: 10.1109/55.622515
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 18
Issue: 9
起始頁: 417
結束頁: 419
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XR89300005.pdf