Full metadata record
DC FieldValueLanguage
dc.contributor.authorMeng, HFen_US
dc.contributor.authorLai, CMen_US
dc.date.accessioned2014-12-08T15:01:30Z-
dc.date.available2014-12-08T15:01:30Z-
dc.date.issued1997-09-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://hdl.handle.net/11536/339-
dc.description.abstractIt is theoretically demonstrated that, in the presence of an electric potential landscape, the ground-state energy of the electron-hole plasma can be substantially lowered against the ground-state energy of the excitons. The electron-hole plasma is found to be unstable at lower carrier densities. The critical carrier density for the transition between these two states can be reduced. This reduction provides a new mechanism of nonlinear optics for bulk direct band-gap semiconductors, with picosecond relaxation time, large nonlinearity, and requiring low pump intensity.en_US
dc.language.isoen_USen_US
dc.subjectelectron-hole plasmaen_US
dc.subjectsemi conductorsen_US
dc.titleUltrafast nonlinear optics due to electron-hole plasma in bulk semiconductorsen_US
dc.typeArticleen_US
dc.identifier.journalPHYSICA Ben_US
dc.citation.volume240en_US
dc.citation.issue1-2en_US
dc.citation.spage76en_US
dc.citation.epage82en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:A1997XZ73600011-
dc.citation.woscount0-
Appears in Collections:Articles


Files in This Item:

  1. A1997XZ73600011.pdf