標題: Ultrafast nonlinear optics due to electron-hole plasma in bulk semiconductors
作者: Meng, HF
Lai, CM
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
關鍵字: electron-hole plasma;semi conductors
公開日期: 1-九月-1997
摘要: It is theoretically demonstrated that, in the presence of an electric potential landscape, the ground-state energy of the electron-hole plasma can be substantially lowered against the ground-state energy of the excitons. The electron-hole plasma is found to be unstable at lower carrier densities. The critical carrier density for the transition between these two states can be reduced. This reduction provides a new mechanism of nonlinear optics for bulk direct band-gap semiconductors, with picosecond relaxation time, large nonlinearity, and requiring low pump intensity.
URI: http://hdl.handle.net/11536/339
ISSN: 0921-4526
期刊: PHYSICA B
Volume: 240
Issue: 1-2
起始頁: 76
結束頁: 82
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XZ73600011.pdf