標題: FEGE LIQUID-METAL ION-SOURCE FOR MASKLESS ISOLATION IMPLANTS IN INP
作者: CHU, CH
BARR, DL
HARRIOTT, LR
WADE, HH
奈米中心
Nano Facility Center
公開日期: 1-Jul-1992
摘要: A Fe-Ge alloy was used to fabricate a liquid metal ion source (LMIS) for our focused ion beam system. The iron ion and germanium ions can be utilized to create semi-insulating regions for device isolation and n-type doping in InP. The properties of the Fe-Ge LMIS were characterized by measuring the ion current-extraction voltage characteristics, the mass spectrum of the ion species in the ion beam, and the stability of the source current. The changes of resistivity in InP before and after Fe + + implant and after thermal annealing were measured in mesa-etched four-terminal test structures. The resistivity of as-implanted samples increases about four orders of magnitude compared with original resistivity. After rapid thermal annealing at 400-degrees-C for 10 s, the resistivity is about two times larger than that of as-implanted sample.
URI: http://dx.doi.org/10.1116/1.585899
http://hdl.handle.net/11536/3374
ISSN: 1071-1023
DOI: 10.1116/1.585899
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 10
Issue: 4
起始頁: 1273
結束頁: 1276
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  1. A1992JJ60000003.pdf