標題: GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES
作者: HONG, JW
SHIN, NF
JEN, TS
NING, SL
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-七月-1992
摘要: In order to improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's), a p-i-n TFLED with a graded p-i junction has been proposed and fabricated. The electroluminescence (EL) intensity of the proposed TFLED was more than 100 times higher than that of the basic p-i-n TFLED and about 35 times lower than that of the conventional green LED, at the same injection current density. This significant improvement was attributed to the better interface property and enhancement of hole injection efficiency by using the graded-gap p-i junction.
URI: http://dx.doi.org/10.1109/55.192760
http://hdl.handle.net/11536/3373
ISSN: 0741-3106
DOI: 10.1109/55.192760
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 13
Issue: 7
起始頁: 375
結束頁: 377
顯示於類別:期刊論文


文件中的檔案:

  1. A1992JA54500007.pdf