標題: NUMERICAL-ANALYSIS OF THE PHOTOEFFECTS IN GAAS-MESFETS
作者: LO, SH
LEE, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1992
摘要: The photoeffects on the I-V characteristics of GaAs MESFET's have been studied by a two-dimensional numerical method. It is theoretically verified that the photovoltaic effect occurring at the channel/substrate interface is responsible for the substantial increase of the drain current. The reverse gate current due to illumination is caused by sweep-out by the high electrical field in the gate depletion region, where a large gradient in the depth profile of the hole Fermi energy is found. For devices with a lightly doped n-type buffer layer, the increase of the drain current is less than for devices without a buffer layer, but is still substantial.
URI: http://dx.doi.org/10.1109/16.141220
http://hdl.handle.net/11536/3361
ISSN: 0018-9383
DOI: 10.1109/16.141220
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 39
Issue: 7
起始頁: 1564
結束頁: 1570
顯示於類別:期刊論文


文件中的檔案:

  1. A1992HZ82300004.pdf