標題: NUMERICAL-SIMULATION OF THE HYSTERESIS IN THE SIDEGATING EFFECT IN GAAS-MESFETS - THE EFFECT OF SCHOTTKY CONTACTS
作者: CHANG, SJ
LEE, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-1992
摘要: Two-dimensional simulation of the sidegating effect in GaAs MESFET's has been performed. The result confirms that Schottky contacts on semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFET's. The competition between the currents or biases of the contacts is found to be the cause of the S-type negative differential conductivity (S-NDC) or hysteresis observed when measuring the sidegating threshold.
URI: http://dx.doi.org/10.1109/55.192783
http://hdl.handle.net/11536/3342
ISSN: 0741-3106
DOI: 10.1109/55.192783
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 13
Issue: 8
起始頁: 436
結束頁: 438
顯示於類別:期刊論文


文件中的檔案:

  1. A1992JE79400016.pdf