Title: NUMERICAL-SIMULATION OF THE HYSTERESIS IN THE SIDEGATING EFFECT IN GAAS-MESFETS - THE EFFECT OF SCHOTTKY CONTACTS
Authors: CHANG, SJ
LEE, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Aug-1992
Abstract: Two-dimensional simulation of the sidegating effect in GaAs MESFET's has been performed. The result confirms that Schottky contacts on semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFET's. The competition between the currents or biases of the contacts is found to be the cause of the S-type negative differential conductivity (S-NDC) or hysteresis observed when measuring the sidegating threshold.
URI: http://dx.doi.org/10.1109/55.192783
http://hdl.handle.net/11536/3342
ISSN: 0741-3106
DOI: 10.1109/55.192783
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 13
Issue: 8
Begin Page: 436
End Page: 438
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  1. A1992JE79400016.pdf