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dc.contributor.authorShen, CCen_US
dc.contributor.authorShu, CKen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorOu, Jen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorChen, WHen_US
dc.date.accessioned2014-12-08T15:49:23Z-
dc.date.available2014-12-08T15:49:23Z-
dc.date.issued1998-02-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/32829-
dc.description.abstractPhotoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of similar to-4 x 10(-4) eV.K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n(1/3). We also obtained a concentration coefficient of 2.34 x 10(-4) eV.cm and a band gap energy of 3.426 eV in the undoped GaN film.en_US
dc.language.isoen_USen_US
dc.subjectphotoluminescenceen_US
dc.subjectoptical properties of thin filmsen_US
dc.titlePhotoluminescence studies of GaN films of different buffer layer and doping concentrationen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume36en_US
dc.citation.issue1en_US
dc.citation.spage32en_US
dc.citation.epage37en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
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