標題: Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
作者: Chen, LP
Chan, YC
Chang, SJ
Huang, GW
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SiGe;photo-CVD;VUV;Auger profile;X-ray photoelectron spectroscopy
公開日期: 1-Feb-1998
摘要: Oxidation of Si1-xGex films has been carried out by direct photo chemical Vapor deposition (direct photo-CVD) directly with activated O-2 induced by Vacuum-Ultra-Violet (VUV) light radiation, The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed, This might be the reason that Cc pileup effect is eliminated in this study.
URI: http://dx.doi.org/10.1143/JJAP.37.L122
http://hdl.handle.net/11536/32827
ISSN: 
DOI: 10.1143/JJAP.37.L122
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 37
Issue: 2A
起始頁: L122
結束頁: L124
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