標題: Highly oriented (Zr0.7Sn0.3)TiO4 thin films grown by rf magnetron sputtering
作者: Wu, FJ
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-1998
摘要: Thin films of (Zr0.7Sn0.3)TiO4 on Si(100) were prepared by rf magnetron sputtering in the present study. Films of a highly preferred [020] orientation, as demonstrated by X-ray diffraction and transmission electron microscopic examinations, were grown successfully on a Si substrate with in situ postannealing at 700 degrees C. The chemical composition of the films, measured by secondary ion mass spectroscopy, exhibited a uniform concentration distribution for all species. A study by X-ray photoelectron spectroscopy further revealed some firm evidence of a molecular orbital that affected the chemical structure. The dielectric constants of 400-nm-thick (Zr0.7Sn0.3)TiO4 films in the present study were >18 for the films with a preferred orientation and similar to 11 for polycrystalline films.
URI: http://hdl.handle.net/11536/32804
ISSN: 0002-7820
期刊: JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume: 81
Issue: 2
起始頁: 439
結束頁: 443
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