標題: Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer
作者: Chen, YA
Chiou, CF
Tsay, WC
Laih, LH
Hong, JW
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1997
摘要: The graded-gap a-SiC:II-based p-i-n thin-film light-emitting diodes (TFLED's) with an additional low-resistance and high-reflectance n(+)-a-SiCGe:H layer mere proposed and fabricated on indium-tin-oxide (ITO)-coated glass substrate in this paper. For a finished TFLED, a brightness of 720 cd/m(2) could be obtained at an injection current density of 600 mA/cm(2), and its EL (electroluminescence) threshold voltage was lowered to 8.6 V. in addition, the effects of reflectance and resistance of a-SiCGe:H film an the performance of TFLED were discussed, The optimum rapid thermal annealing (RTA) conditions for fabrication of TFLED after metallization were also studied and employed to improve the optoelectronic characteristics of TFLED.
URI: http://dx.doi.org/10.1109/16.622587
http://hdl.handle.net/11536/328
ISSN: 0018-9383
DOI: 10.1109/16.622587
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 44
Issue: 9
起始頁: 1360
結束頁: 1366
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XR10800003.pdf