標題: Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxy
作者: Cheng, YC
Tai, KC
Chou, ST
Huang, KF
Tu, SL
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: SSMBE;InGaP;ordering;SL;polarized PL
公開日期: 15-Feb-1998
摘要: In0.5Ga0.5P grown on GaAs substrates with different tilting angles by solid source molecular beam epitaxy (SSMBE) is studied. The results showed that a weak ordering effect still exists in SSMBE grown epilayers with tilted substrates. However, the ordering effect can be drastically reduced by growing In0.5Ga0.5P on a 15 degrees tilted substrate with an InAlP/InGaP superlattices (SL) buffer layer. The In0.5Ga0.5P epilayer grown by this method showed a peak photoluminescence (PL) energy of similar to 1.91 eV at room temperature, which is similar to the reported value for a fully disordered sample. The intensity of the ordering effect is characterized by polarized PL spectroscopy, and the reduction in the ordering intensity is attributed to the elimination of initial surface strain by the SL buffer layer.
URI: http://dx.doi.org/10.1143/JJAP.37.L200
http://hdl.handle.net/11536/32791
ISSN: 
DOI: 10.1143/JJAP.37.L200
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 37
Issue: 2B
起始頁: L200
結束頁: L202
Appears in Collections:Articles


Files in This Item:

  1. 000073521600003.pdf