標題: A model for low-temperature operation of minority-carrier well-type guard rings in epitaxial CMOS structures
作者: Huang, CY
Chen, MJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1998
摘要: As temperature is lowered, behaviors of well-type guard rings in an epitaxial substrate are quite different from those at RT so that the previous formulation is unable to reflect these discrepancies precisely. This leads to a new escape-current model suitable for low-temperature applications. In addition to the structural parameters, the new model is also functions of other physical quantities such as temperature, high-level injection, surface recombination velocity at the high/low junction and minority-carrier transport parameters, which are also important at low temperature. (C) 1997 Elsevier Science Ltd.
URI: http://hdl.handle.net/11536/32773
ISSN: 0038-1101
期刊: SOLID-STATE ELECTRONICS
Volume: 42
Issue: 3
起始頁: 453
結束頁: 457
顯示於類別:期刊論文


文件中的檔案:

  1. 000073203900025.pdf