標題: Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate
作者: Fan, JC
Tsai, CM
Chen, KY
Wang, SY
Lin, G
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: epitaxial lift-off (ELO) method;laser diode;n-type GaAs
公開日期: 1-三月-1998
摘要: Low-resistance ohmic conduction across an epitaxially lifted-off(ELO) thin n-GaAs film and a Si substrate was obtained by attaching the ELO film on the Si substrate coated with a Pd/Ge/Pd multilayer. Good bonding and ohmic contacts to both GaAs and Si were achieved at the same time after annealing. The interface compound formation was studied by secondary ion mass spectroscopy and x-ray diffraction analyses. This ELO technology was used to fabricate an ELO stripe geometry diode laser on Si with the back-side contact on Si substrate. Good laser performance with comparable characteristics as conventional laser diodes on GaAs substrates was obtained.
URI: http://hdl.handle.net/11536/32756
ISSN: 0361-5235
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 27
Issue: 3
起始頁: 110
結束頁: 113
顯示於類別:期刊論文


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  1. 000072528800003.pdf