標題: Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films
作者: Lei, TF
Cheng, JY
Shiau, SY
Chao, TS
Lai, CS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-1998
摘要: This work examines the characteristics of polyoxides thermally grown and deposited an polished polysilicon films. A well-controlled chemical mechanical polishing (CMP) process is also presented to achieve a planar surface morphology Tot polysilicon films. The thermally-grown and deposited polyoxides on the polished polysilicon films exhibit a lower leakage current, higher dielectric breakdown field, higher electron barrier height, lower electron trapping, rate, lower density of trapped charges, and markedly higher charge to breakdown (Q(bd)) than the conventional polyoxide. In particular, the deposited polyoxide on the polished polysilicon film has the highest dielectric breakdown field, lowest electron trapping rate, and highest charge to breakdown due to the planar polyoxide/polysilicon interface. In addition, experimental results indicate that the trapped charges of the polished samples are located in the polyoxides' upper portion, which differs from conventional polyoxides. Undoubtedly, the deposited polyoxide on the polished polysilicon film considered herein is the most promising candidate to yield optimum characteristics of polyoxide.
URI: http://dx.doi.org/10.1109/16.662802
http://hdl.handle.net/11536/32710
ISSN: 0018-9383
DOI: 10.1109/16.662802
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 45
Issue: 4
起始頁: 912
結束頁: 917
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