標題: Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's
作者: Chen, MJ
Huang, HT
Hou, CS
Yang, KN
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-四月-1998
摘要: The drain leakage current in MOSFET's in the present standard process is separated into three distinct components: the subthreshold conduction, the surface band-to-band tunneling (BTBT), and the bulk BTBT, Each of the three shows different dependencies on hack-gate bias, As a result, the hulk BTBT, increasing exponentially with increasing the magnitude of back-gate reverse bias, promptly dominates the drain leakage, Additional experiment highlights the effect of the increased hulk dopant concentrations as in next-generation scaled MOSFET's on the bulk BTBT, This sets the hulk BTBT a significant constraint to the low-voltage. low-power, high-density circuits employing the back-gate reverse bias, In the work, the measured drain leakage of interest is successfully reproduced by two-dimensional (2-D) device simulation.
URI: http://dx.doi.org/10.1109/55.663538
http://hdl.handle.net/11536/32696
ISSN: 0741-3106
DOI: 10.1109/55.663538
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 19
Issue: 4
起始頁: 134
結束頁: 136
顯示於類別:期刊論文


文件中的檔案:

  1. 000072567100013.pdf