標題: A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma
作者: Cheng, HC
Lin, W
Kang, TK
Perng, YC
Dai, BT
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-1998
摘要: A two-step etching has been performed to eliminate the plasma charging damages during helicon-wave plasma metal etching without selectivity loss, This technique utilized a normal etching recipe to remove the Al film and followed by an optimized etching recipe for the overetching step. By increasing the bias power and decreasing the source power, the optimum etching recipe can cause the plasma more directionally and reduce the Al charging damages. Eventually, the damage mechanism was also reported.
URI: http://dx.doi.org/10.1109/55.678537
http://hdl.handle.net/11536/32604
ISSN: 0741-3106
DOI: 10.1109/55.678537
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 19
Issue: 6
起始頁: 183
結束頁: 185
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